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 SMD Efficient Fast Recovery Rectifier
COMCHIP
www.comchip.com.tw
CEFB201 Thru CEFB205
Reverse Voltage: 50 - 600 Volts Forward Current: 2.0 Amp
Features
Ideal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0 Super fast recovery time for high efficient Built-in strain relief Low forward voltage drop
SMB/DO-214AA
0.083(2.11) 0.075(1.91) 0.185(4.70) 0.160(4.06)
0.155(3.94) 0.130(3.30)
Mechanical Data
0.096(2.44) 0.083(2.13)
0.012(0.31) 0.006(0.15)
Case: JEDEC DO-214AA molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight:0.093 gram
0.050(1.27) 0.030(0.76)
0.220(5.59) 0.200(5.08)
0.008(0.20) 0.203(0.10)
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characterics
Parameter Max. Repetitive Peak Reverse Voltage Max. DC Blocking Voltage Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load ( JEDEC method ) Max. Average Forward Current Max. Instantaneous Forward Current at 2.0 A Reverse recovery time Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25 C Ta=100 C Max. Thermal Resistance (Note 1) Operating Junction Temperature Storage Temperature Symbol VRRM VDC VRMS IFSM CEFB 201 50 50 35 CEFB 202 100 100 70 CEFB 203 200 200 140 CEFB 204 400 400 280 CEFB 205 600 600 420
Unit
V V V A
40
35
Io VF Trr IR R
0.875 25
2.0
1.1 35 1.25 50
A V nS uA
5.0 250 15 -55 to +150 -55 to +150
JL
C/W C C
Tj TSTG
Note 1: Thermal resistance from junction to lead P.C.B. Mounted on 8.0x8.0 mm copper pad areas.
MDS0210023A
Page 1
SMD Efficient Fast Recovery Rectifier
COMCHIP
www.comchip.com.tw
Rating and Characteristic Curves (CEFB201 Thru CEFB205)
Fig. 1 - Reverse Characteristics
100
10
Fig.2 - Forward Characteristics
CEFB201-203
Reverse Current ( uA )
10
Forward current ( A )
Tj=125 C
1.0
CEFB204 CEFB205
0.1
1.0
Tj=75 C
0.1 Tj=25 C 0. 01 0
0.01
Tj=25 C Pulse width 300uS 4% duty cycle
0.001
20
40
60
80
100
120
140
0 0.2
0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Junction Capacitance
200 100
Junction Capacitance (pF)
Fig. 4 - Non Repetitive Forward Surge Current
Peak Surge Forward Current ( A )
50
8.3mS Single Half Sine Wave JEDEC methode
40
30 Tj=25 C 20
Tj=25 C
10
10 0
2 0.1
1.0
10
100
1
5
10
50
1 00
Reverse Voltage (V)
Number of Cycles at 60Hz
Fig. 5 - Test Circuit Di agram and Reverse Recovery Time Characteristics
50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A
Fig. 6 - Current Derating Curve
2.8
Average Forward Current ( A )
trr
| | | | | | | |
2.4 2.0 1.6 1.2 0.8 0.4 00
(+) 25Vdc (approx.) () 1W NONINDUCTIVE OSCILLISCOPE (NOTE 1) D.U.T.
() PULSE GENERATOR (NOTE 2) (+) 0 -0.25A
Single Phase Half Wave 60Hz
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms.
-1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm
25
50
75
100
125
150
175
Ambient Temperature ( C)
MDS0210023A
Page 2


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